Invention Grant
US09574945B2 THz radiation detection in standard CMOS technologies based on thermionic emission
有权
基于热离子发射的标准CMOS技术中的太赫兹辐射检测
- Patent Title: THz radiation detection in standard CMOS technologies based on thermionic emission
- Patent Title (中): 基于热离子发射的标准CMOS技术中的太赫兹辐射检测
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Application No.: US15067521Application Date: 2016-03-11
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Publication No.: US09574945B2Publication Date: 2017-02-21
- Inventor: Zeljko Ignjatovic , Hanan Dery
- Applicant: University of Rochester
- Applicant Address: US NY Rochester
- Assignee: University of Rochester
- Current Assignee: University of Rochester
- Current Assignee Address: US NY Rochester
- Agency: Cooper & Dunham LLP
- Main IPC: G01J5/00
- IPC: G01J5/00 ; G01J5/08 ; H01L31/112 ; G01J5/22 ; G01J5/20 ; G01J5/10
Abstract:
A detector of terahertz (THz) energy includes a MOSFET having an extended source region, and a channel region depleted of free carriers, which MOSFET operates in a sub-threshold voltage state and has an output that is an exponential function of THz energy supplied to the gate.
Public/Granted literature
- US20160305823A1 THz RADIATION DETECTION IN STANDARD CMOS TECHNOLOGIES BASED ON THERMIONIC EMISSION Public/Granted day:2016-10-20
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