Invention Grant
US09580681B2 Method of manufacturing patterned substrate for culturing cells, patterned substrate, and patterned cell chip
有权
制造用于培养细胞,图案化衬底和图案化细胞芯片的图案化衬底的方法
- Patent Title: Method of manufacturing patterned substrate for culturing cells, patterned substrate, and patterned cell chip
- Patent Title (中): 制造用于培养细胞,图案化衬底和图案化细胞芯片的图案化衬底的方法
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Application No.: US14634190Application Date: 2015-02-27
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Publication No.: US09580681B2Publication Date: 2017-02-28
- Inventor: Dong Geun Jung , Chang Rok Choi , Kyung Seop Kim
- Applicant: Sungkyunkwan University Foundation for Corporate Collaboration
- Applicant Address: KR Gyeonggi-do
- Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
- Current Assignee: Sungkyunkwan University Foundation for Corporate Collaboration
- Current Assignee Address: KR Gyeonggi-do
- Agency: Cesari and McKenna LLP
- Priority: KR10-2009-0082152 20090901
- Main IPC: C08F2/46
- IPC: C08F2/46 ; C12N5/00 ; B05D1/00 ; B05D1/32

Abstract:
A method of manufacturing a patterned substrate for culturing cells. The method includes the steps of: (1) preparing a substrate, (2) forming a first plasma polymer layer by integrating a first precursor material on the substrate using a plasma, wherein the first plasma layer inhibits cell adsorption, and wherein the first precursor material is a siloxane-based compound having a siloxane functional group with the Si—O—Si linkage, (3) placing a shadow mask having a predetermined pattern on the first plasma polymer layer thus formed, and (4) forming a second patterned plasma polymer layer by integrating a second precursor material using a plasma, wherein the second patterned plasma layer permits culturing of cells, whereby the patterned substrate is obtained.
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