Invention Grant
US09583562B2 Reduction of defect induced leakage in III-V semiconductor devices
有权
减少III-V半导体器件缺陷引起的漏电
- Patent Title: Reduction of defect induced leakage in III-V semiconductor devices
- Patent Title (中): 减少III-V半导体器件缺陷引起的漏电
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Application No.: US14745146Application Date: 2015-06-19
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Publication No.: US09583562B2Publication Date: 2017-02-28
- Inventor: Joel P. de Souza , Jeehwan Kim , Devendra K. Sadana , Brent A. Wacaser
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/06 ; H01L29/24 ; H01L29/201 ; H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/10 ; H01L29/207
Abstract:
A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 108 cm−2. An n-type layer is formed on or in the p-doped layer. The n-type layer includes a II-VI material configured to tolerate the dislocation density to form an electronic device with reduced leakage current over a device with a III-V n-type layer.
Public/Granted literature
- US20160336395A1 REDUCTION OF DEFECT INDUCED LEAKAGE IN III-V SEMICONDUCTOR DEVICES Public/Granted day:2016-11-17
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