Invention Grant
- Patent Title: Sn vapor EUV LLP source system for EUV lithography
- Patent Title (中): 用于EUV光刻的Sn蒸气EUV LLP源系统
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Application No.: US14260306Application Date: 2014-04-24
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Publication No.: US09585236B2Publication Date: 2017-02-28
- Inventor: Natale M. Ceglio , Daniel Stearns , Richard Levesque
- Applicant: Media Lario S.R.L.
- Applicant Address: IT Bosisio Parini
- Assignee: Media Lario SRL
- Current Assignee: Media Lario SRL
- Current Assignee Address: IT Bosisio Parini
- Agency: Opticus IP Law PLLC
- Main IPC: H05G2/00
- IPC: H05G2/00 ; G03F7/20
Abstract:
A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of
Public/Granted literature
- US20140326904A1 Sn vapor EUV LLP source system for EUV lithography Public/Granted day:2014-11-06
Information query
