Invention Grant
- Patent Title: Non-volatile memory and fabricating method thereof
- Patent Title (中): 非易失性存储器及其制造方法
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Application No.: US14963833Application Date: 2015-12-09
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Publication No.: US09589977B1Publication Date: 2017-03-07
- Inventor: Ko-Chi Chen , Shen-De Wang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: CN201510724303 20151030
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115 ; H01L29/66 ; H01L29/423 ; H01L29/40 ; H01L21/28
Abstract:
The invention provides a non-volatile memory and a fabricating method thereof. The non-volatile memory includes a substrate, an embedded-type charge storage transistor, and a selection transistor. The substrate has an opening. The embedded-type charge storage transistor is disposed in the substrate. The embedded-type charge storage transistor includes a charge storage structure and a conductive layer. The charge storage structure is disposed on the substrate in the opening. The conductive layer is disposed on the charge storage structure and fills the opening. The selection transistor is disposed on the substrate at one side of the embedded-type charge storage transistor, wherein the selection transistor includes a metal gate structure. The non-volatile memory has excellent charge storage capacity.
Information query
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