Invention Grant
US09590618B2 Start-up technique and system for a self-powered gate drive circuit
有权
自供电门驱动电路的启动技术和系统
- Patent Title: Start-up technique and system for a self-powered gate drive circuit
- Patent Title (中): 自供电门驱动电路的启动技术和系统
-
Application No.: US14435199Application Date: 2012-10-31
-
Publication No.: US09590618B2Publication Date: 2017-03-07
- Inventor: Thierry Sicard , Philippe Perruchoud
- Applicant: Thierry Sicard , Philippe Perruchoud
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- International Application: PCT/IB2012/002655 WO 20121031
- International Announcement: WO2014/068354 WO 20140508
- Main IPC: H03K17/567
- IPC: H03K17/567 ; H02M1/08 ; H02M1/36 ; H03K17/082

Abstract:
A start-up method for a self-powered gate drive circuit driving a power transistor gate. The method comprises charging, with a single-supply voltage, a first supply capacitor of a first gate drive circuit; switching on a first power transistor by applying a current supplied by a discharge of the first supply capacitor of the first gate drive circuit to the gate of the first power transistor; charging a second supply capacitor of the first gate drive circuit using an output signal from the first power transistor; and re-charging the first supply capacitor by applying a current supplied by a discharge of the second supply capacitor to the first capacitor.
Public/Granted literature
- US20150280705A1 START-UP TECHNIQUE AND SYSTEM FOR A SELF-POWERED GATE DRIVE CIRCUIT Public/Granted day:2015-10-01
Information query
IPC分类: