Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14569492Application Date: 2014-12-12
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Publication No.: US09601609B2Publication Date: 2017-03-21
- Inventor: Tatsuo Nakayama , Hironobu Miyamoto , Yasuhiro Okamoto , Yoshinao Miura , Takashi Inoue
- Applicant: Renesas Electronics Electronics
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-259064 20131216
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/15 ; H01L29/201 ; H01L29/40 ; H01L29/10 ; H01L29/20

Abstract:
Characteristics of a semiconductor device are improved.A semiconductor device includes a potential fixing layer, a channel underlayer, a channel layer, and a barrier layer formed above a substrate, a trench that penetrates the barrier layer and reaches as far as a middle of the channel layer, a gate electrode disposed by way of an insulation film in the trench, and a source electrode and a drain electrode formed respectively over the barrier layer on both sides of the gate electrode. A coupling portion inside the through hole that reaches as far as the potential fixing layer electrically couples the potential fixing layer and the source electrode. This can reduce fluctuation of the characteristics such as a threshold voltage and an on-resistance.
Public/Granted literature
- US20150171204A1 Semiconductor Device Public/Granted day:2015-06-18
Information query
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