Invention Grant
- Patent Title: Direct metalization of electrical circuit structures
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Application No.: US14238638Application Date: 2012-09-06
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Publication No.: US09603249B2Publication Date: 2017-03-21
- Inventor: James Rathburn
- Applicant: James Rathburn
- Applicant Address: US MN Maple Grove
- Assignee: HSIO Technologies, LLC
- Current Assignee: HSIO Technologies, LLC
- Current Assignee Address: US MN Maple Grove
- International Application: PCT/US2012/053848 WO 20120906
- International Announcement: WO2013/036565 WO 20130314
- Main IPC: H01R43/00
- IPC: H01R43/00 ; H05K1/11 ; H01L23/498 ; H05K3/46 ; H01L23/00

Abstract:
An electrical interconnect including a first circuitry layer with a first surface and a second surface. At least a first dielectric layer is printed on the first surface of the first circuitry layer to include a plurality of first recesses. A conductive material is plated on surfaces of a plurality of the first recesses to form a plurality of first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A filler material is deposited in the first conductive structures. At least a second dielectric layer is printed on the first dielectric layer to include a plurality of second recesses generally aligned with a plurality of the first conductive structures. A conductive material is plated on surfaces of a plurality of the second recesses to form a plurality of second conductive structures electrically coupled to, and extending parallel to the first conductive structures.
Public/Granted literature
- US20140192498A1 DIRECT METALIZATION OF ELECTRICAL CIRCUIT STRUCTURES Public/Granted day:2014-07-10
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