Invention Grant
- Patent Title: Data reading method, memory controlling circuit unit and memory storage device
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Application No.: US14682123Application Date: 2015-04-09
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Publication No.: US09607704B2Publication Date: 2017-03-28
- Inventor: Wei Lin , Tien-Ching Wang , Kuo-Hsin Lai
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW104106033A 20150225
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C16/26 ; G06F11/10 ; G11C7/10 ; G11C29/04

Abstract:
A data reading method is provided. The data reading method includes receiving a read command from a host system; sending a first read command sequence to obtain a first data string from memory cells of a rewritable non-volatile memory module; performing a decoding procedure on the first data string to generate a decoded first data string; and, if there is an error bit in the decoded first data string, sending a second read command sequence to obtain a second data string from the memory cells, performing a logical operation on the decoded first data string and the second data string to obtain an adjusting data string, adjusting the decoded first data string according to the adjusting data string to obtain an adjusted first data string, and using a data string obtained after re-performing the decoding procedure on the adjusted first data string as the decoded first data string.
Public/Granted literature
- US20160247575A1 DATA READING METHOD, MEMORY CONTROLLING CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2016-08-25
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