Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US14258361Application Date: 2014-04-22
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Publication No.: US09607963B2Publication Date: 2017-03-28
- Inventor: Chang-Fu Lin , Chin-Tsai Yao , Ming-Chin Chuang , Fu-Tang Huang
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Priority: TW102124670A 20130710
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L23/498

Abstract:
A semiconductor device is disclosed, which includes: a substrate having a substrate body and a plurality of conductive pads formed on the substrate body, wherein each of the conductive pads has at least an opening formed in a first surface thereof; a semiconductor component having a plurality of bonding pads; a plurality of conductive elements formed between the bonding pads and the conductive pads and in the openings of the conductive pads; and an encapsulant formed between the substrate and the semiconductor component for encapsulating the conductive elements, thereby strengthening the bonding between the conductive elements and the conductive pads and consequently increasing the product yield.
Public/Granted literature
- US20150014848A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2015-01-15
Information query
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