Invention Grant
- Patent Title: Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques
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Application No.: US15017552Application Date: 2016-02-05
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Publication No.: US09608042B2Publication Date: 2017-03-28
- Inventor: Fabio Pellizzer , Giulio Albini , Stephen W. Russell , Max F. Hineman , Sanjay Rangan
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.
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