Invention Grant
- Patent Title: High density nano-array for sensing
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Application No.: US14725067Application Date: 2015-05-29
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Publication No.: US09612224B2Publication Date: 2017-04-04
- Inventor: Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu , Zhen Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: G01N27/414
- IPC: G01N27/414

Abstract:
A sensor includes a semiconductor substrate having first pointed nodes extending into a channel from a first side of the channel. Second pointed nodes extend into the channel from a second side of the channel, which is opposite the first side. The second pointed nodes being self-aligned to the first pointed nodes on the opposite side of the channel. The first pointed nodes and the second pointed nodes are connected to a circuit to detect particles in the channel.
Public/Granted literature
- US20160349207A1 HIGH DENSITY NANO-ARRAY FOR SENSING Public/Granted day:2016-12-01
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