A semiconductor device comprising: an insulation substrate; an intrinsic semiconductor nanowire formed on the insulation substrate and having both ends doped in a p-type and an n-type, respectively and a region, which is not doped, between the doped region; doped region electrodes formed on each of the p-type doped region and the n-type doped region of the semiconductor nanowire; a lower insulation layer formed on an intrinsic region of the semiconductor nanowire; an intrinsic region electrode formed on a part of the lower insulation layer; and a metal or semiconductor nanoparticle region formed on the lower insulation layer and between the intrinsic region electrode and the doped region electrode and spaced apart from the electrodes.