Invention Grant
- Patent Title: Field effect transistor and method of fabricating the same
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Application No.: US14633984Application Date: 2015-02-27
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Publication No.: US09634112B2Publication Date: 2017-04-25
- Inventor: Hyung Sup Yoon , Byoung-Gue Min , Jong-Won Lim , Hokyun Ahn , Seong-Il Kim , Sang Heung Lee , Dong Min Kang , Chull Won Ju , Jae Kyoung Mun
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2012-0144126 20121212
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/40 ; H01L29/423 ; H01L29/20 ; H01L21/02 ; H01L21/28 ; H01L21/311 ; H01L29/201 ; H01L29/205 ; H01L21/285
Abstract:
A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a Γ-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the Γ-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.
Public/Granted literature
- US20150171188A1 FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-06-18
Information query
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