Invention Grant
- Patent Title: Method for forming quantum dot thin film
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Application No.: US15109546Application Date: 2014-12-09
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Publication No.: US09644077B2Publication Date: 2017-05-09
- Inventor: Hyung-Cheoul Shim , So-Hee Jeong , Won-Seok Chang
- Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
- Applicant Address: KR Daejeon
- Assignee: Korea Institute of Machinery & Materials
- Current Assignee: Korea Institute of Machinery & Materials
- Current Assignee Address: KR Daejeon
- Agency: Hauptman Ham, LLP
- Priority: KR10-2014-0075962 20140620
- International Application: PCT/KR2014/012071 WO 20141209
- International Announcement: WO2015/194721 WO 20151223
- Main IPC: B05D5/12
- IPC: B05D5/12 ; C08J7/06 ; B82B3/00 ; B05D1/00 ; B05D1/02 ; B05D1/18
Abstract:
A method for manufacturing a quantum dot thin film includes applying a tensile force to a substrate to elongate the substrate, coating a quantum dot particle on the substrate to form a quantum dot thin film, replacing a ligand of the quantum dot particle, and removing the tensile force from the substrate. The method may reduce a crack in a quantum dot thin film.
Public/Granted literature
- US20160326326A1 METHOD FOR FORMING QUANTUM DOT THIN FILM Public/Granted day:2016-11-10
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