An imprint lithography template is disclosed. The imprint lithography template includes a plurality of pattern features extending from a plane of a body of the imprint lithography template, and away from that body, the pattern features to be used to apply a pattern into an imprintable medium. The imprint lithography template further includes a plurality of assist features in the form of recesses extending from the plane of that body of the imprint lithography template, and into that body. A method for forming the assist features in the imprint lithography template, using self-assembled block copolymers as an etch resist, is also disclosed.