Invention Grant
- Patent Title: Porous fin as compliant medium to form dislocation-free heteroepitaxial films
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Application No.: US14812797Application Date: 2015-07-29
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Publication No.: US09646832B2Publication Date: 2017-05-09
- Inventor: Kangguo Cheng , Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/336 ; H01L29/78 ; H01L21/02 ; H01L29/165 ; H01L29/04 ; H01L21/30
Abstract:
A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer to form fins. The fins are converted to porous fins. A surface of the porous fins is treated to make the surface suitable for epitaxial growth. Lattice mismatch is compensated for between an epitaxially grown monocrystalline layer grown on the surface and the monocrystalline substrate by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate.
Public/Granted literature
- US20170032963A1 POROUS FIN AS COMPLIANT MEDIUM TO FORM DISLOCATION-FREE HETEROEPITAXIAL FILMS Public/Granted day:2017-02-02
Information query
IPC分类:
