Invention Grant
- Patent Title: Fabrication of nano-sheet transistors with different threshold voltages
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Application No.: US15268993Application Date: 2016-09-19
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Publication No.: US09653289B1Publication Date: 2017-05-16
- Inventor: Karthik Balakrishnan , Kangguo Cheng , Pouya Hashemi , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/00 ; H01L21/338 ; H01L21/02 ; H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L21/311 ; H01L21/308 ; H01L21/84 ; H01L21/8238 ; H01L21/8234
Abstract:
A method of forming two or more nano-sheet devices with varying electrical gate lengths, including, forming at least two cut-stacks including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate, removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers, and removing a portion of the at least one alternating nano-sheet channel layer to form a recess having a recess depth in the at least one alternating nano-sheet channel layers, where the recess depth is greater than the indentation depth.
Information query
IPC分类:
