Methods for using high-speed EUV resists including resists having additives that may be detrimental to etch chambers. Methods include using reversal materials and/or reversal techniques, as well as diffusion-limited etch-back and slimming for pattern creation and transfer. A substrate with high-speed EUV resist is lithographically patterned and developed into a patterned resist mask. An image reversal material is then over-coated on the patterned resist mask such that the image reversal material fills and covers the patterned resist mask. An upper portion of the image reversal material is removed such that top surfaces of the patterned resist mask are exposed. The patterned resist mask is removed such that the image reversal material remains resulting in a patterned image reversal material mask. Residual resist material is removed via a slimming process using an acid diffusion and subsequent development.