Invention Grant
- Patent Title: Fabrication and passivation of silicon surfaces
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Application No.: US14085275Application Date: 2013-11-20
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Publication No.: US09656294B2Publication Date: 2017-05-23
- Inventor: Karen K. Gleason , Rong Yang , Yaron Segal , Tonio Buonassisi , Baby Reeja Jayan
- Applicant: Massachusetts Institute of Technology , Shirley Segal
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: B05D1/00
- IPC: B05D1/00 ; H01L31/18 ; H01L21/02

Abstract:
Embodiments described herein are related to methods for processing substrates such as silicon substrates. In some cases, the method may provide the ability to passivate a silicon surface at relatively low temperatures and/or in the absence of a solvent. Methods described herein may be useful in the fabrication of a wide range of devices, including electronic devices such as photovoltaic devices, solar cells, organic light-emitting diodes, sensors, and the like.
Public/Granted literature
- US20140186620A1 FABRICATION AND PASSIVATION OF SILICON SURFACES Public/Granted day:2014-07-03
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