Invention Grant
- Patent Title: Contactless damage inspection of perimeter region of semiconductor device
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Application No.: US14923052Application Date: 2015-10-26
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Publication No.: US09658279B2Publication Date: 2017-05-23
- Inventor: Eric Graetz , Hermann Bilban , Rudolf Pairleitner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014222203 20141030
- Main IPC: G01R31/265
- IPC: G01R31/265 ; G01R31/26 ; H01L21/768 ; H01L21/66 ; H01L23/522 ; H01L23/528 ; H01L29/06 ; H01L29/16

Abstract:
A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. The active semiconductor region has an active surface area, and the perimeter semiconductor region has a perimeter surface area. The power semiconductor device further includes a test structure for contactless testing of the perimeter semiconductor region. The test structure includes an electrically conductive path mounted on the perimeter surface area. The test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.
Public/Granted literature
- US20160124039A1 Edge Damage Inspection Public/Granted day:2016-05-05
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