Invention Grant
- Patent Title: Group III nitride heterostructure for optoelectronic device
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Application No.: US14493388Application Date: 2014-09-23
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Publication No.: US09660133B2Publication Date: 2017-05-23
- Inventor: Rakesh Jain , Maxim S. Shatalov , Jinwei Yang , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/12 ; H01L33/04 ; H01L33/32 ; H01L33/14
Abstract:
Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.
Public/Granted literature
- US20150083994A1 Group III Nitride Heterostructure for Optoelectronic Device Public/Granted day:2015-03-26
Information query
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