A circuit arrangement has a populated circuit carrier and includes a flat insulation carrier having a top side and a patterned metallization layer on the top side and a first power semiconductor chip arranged on a first section of the metallization layer. The first power semiconductor chip has a first lower chip load terminal electrically conductively connected to the first section. A shunt resistor is arranged on a second section of the metallization layer. The shunt resistor has a lower main terminal electrically conductively connected to the second section. An electrically conductive connection is provided between the first section and the second section. The electrically conductive connection includes a constriction between the first section and the second section so that a current which flows between the first lower chip load terminal and the lower main terminal during operation of the circuit arrangement must pass through the constriction.