Invention Grant
- Patent Title: Field emission electron source and field emission device
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Application No.: US13718587Application Date: 2012-12-18
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Publication No.: US09666400B2Publication Date: 2017-05-30
- Inventor: Cai-Lin Guo , Jie Tang , Peng Liu , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agent Steven Reiss
- Priority: CN2012103808707 20121010
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J3/02 ; B82Y99/00 ; B82Y30/00

Abstract:
A field emission electron source includes a linear carbon nanotube structure, an insulating layer and at least one conductive ring. The linear carbon nanotube structure has a first end and a second end. The insulating layer is located on outer surface of the linear carbon nanotube structure. The first conductive ring includes a first ring face 1301 and a second ring face, an end surface of the linear carbon nanotube structure, and the first ring face are coplanar.
Public/Granted literature
- US20140097741A1 FIELD EMISSION ELECTRON SOURCE AND FIELD EMISSION DEVICE Public/Granted day:2014-04-10
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