Invention Grant
- Patent Title: Methods for single exposure—self-aligned double, triple, and quadruple patterning
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Application No.: US14658085Application Date: 2015-03-13
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Publication No.: US09666442B2Publication Date: 2017-05-30
- Inventor: Fitih M. Cinnor , Charles H. Wallace
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/308 ; H01L21/027 ; H01L21/033 ; H01L21/311

Abstract:
A method including forming a pattern on a surface of a substrate, the pattern including one of discrete structures including at least one sidewall defining an oblique angle relative to the surface and discrete structures complemented with a material layer therebetween, the material layer including a volume modified into distinct regions separated by at least one oblique angle relative to the surface; and defining circuit features on the substrate using the pattern, the features having a pitch less than a pitch of the pattern.
Public/Granted literature
- US20150187592A1 METHODS FOR SINGLE EXPOSURE - SELF-ALIGNED DOUBLE, TRIPLE, AND QUADRUPLE PATTERNING Public/Granted day:2015-07-02
Information query
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