A non-volatile semiconductor memory device having an improved layout structure to achieve low power consumption, high speed and miniaturization is provided. A flash memory of the present invention includes a memory array formed with NAND type strings. The memory array includes a plurality of global blocks, one global block includes a plurality of blocks, and one block includes a plurality of NAND type strings. A plurality of local bit lines are shared by each of the plurality of blocks in one global block, a plurality of global bit lines are shared by the plurality of global blocks, and a connecting element selectively connecting one global bit line to n local bit lines is included. When a read-out operation and program operation are executed, one global bit line is shared by n local bit lines.