Invention Grant
- Patent Title: Non-volatile memory with fast read process
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Application No.: US15240370Application Date: 2016-08-18
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Publication No.: US09672940B1Publication Date: 2017-06-06
- Inventor: Phil Reusswig , Nian Niles Yang , Grishma Shah
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C29/44 ; G11C16/26

Abstract:
In response to a request to read data, the non-volatile memory system identifies the physical block that is storing the requested data. Read parameters associated with the physical block are also identified. The read parameters include bit error rate information. The memory system chooses whether to use a read process with a faster sense time or a read process with a slower sense time based on the bit error rate information and temperature data. The requested data is read from the identified physical block using the chosen read process configured by at least a subset of the read parameters.
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