A reverse blocking semiconductor device is manufactured by introducing impurities of a first conductivity type into a semiconductor substrate of the first conductivity type through a process surface to obtain a process layer extending into the semiconductor substrate up to a first depth, and introducing impurities of a second, complementary conductivity type into the semiconductor substrate through openings of an impurity mask provided on the process surface to obtain emitter zones of the second conductivity type extending up to a second depth deeper than the first depth and channels of the first conductivity type between the emitter zones. Exposed portions of the process layer are removed above the emitter zones.