Invention Grant
- Patent Title: Methods of forming through substrate interconnects
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Application No.: US14561642Application Date: 2014-12-05
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Publication No.: US09685375B2Publication Date: 2017-06-20
- Inventor: Dave Pratt , Andy Perkins
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/02
Abstract:
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
Public/Granted literature
- US20150087147A1 Methods of Forming Through Substrate Interconnects Public/Granted day:2015-03-26
Information query
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