Invention Grant
- Patent Title: Semiconductor device and power converter equipment
-
Application No.: US14734665Application Date: 2015-06-09
-
Publication No.: US09698667B2Publication Date: 2017-07-04
- Inventor: Hiroshi Kanno , Hitoshi Sumida
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2014-146487 20140717
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M7/538 ; H03K17/0412

Abstract:
A semiconductor device that has a level shift circuit, an anterior stage circuit, and a posterior stage circuit. The level shift circuit transmits an input signal from a primary potential system to a secondary potential system different from the primary potential system. The anterior stage circuit including a first transistor receives a gate driving signal delivered by the level shift circuit. The posterior stage circuit including a second transistor with the same channel type as that of the first transistor drives a switching element according to the output signal from the first transistor. The threshold voltage of the first transistor is set at a lower value than the threshold voltage of the second transistor.
Public/Granted literature
- US20160020685A1 SEMICONDUCTOR DEVICE AND POWER CONVERTER EQUIPMENT Public/Granted day:2016-01-21
Information query