Invention Grant
- Patent Title: Perforated conductive material for EMI shielding of semiconductor device and components
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Application No.: US14978294Application Date: 2015-12-22
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Publication No.: US09704811B1Publication Date: 2017-07-11
- Inventor: Rajendra C. Dias , Joshua D Heppner , Mitul B Modi , Anna M. Prakash
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/495 ; H01L23/31 ; H01L21/48 ; H01L21/56 ; H01L21/78
Abstract:
An electric device and method of fabrication of that electric device is disclosed. The electric device includes one or more electrical devices attached to a substrate. The electric device further includes one or more grounding pads attached to the substrate. The electric device further includes a perforated conductive material placed on the substrate. The electric device further includes a molding compound deposited to cover the perforated conductive material, the one or more devices, and the one or more grounding pads.
Public/Granted literature
- US20170179040A1 PERFORATED CONDUCTIVE MATERIAL FOR EMI SHIELDING OF SEMICONDUCTOR DEVICE AND COMPONENTS Public/Granted day:2017-06-22
Information query
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