Invention Grant
- Patent Title: Method of improving getter efficiency by increasing superficial area
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Application No.: US14967663Application Date: 2015-12-14
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Publication No.: US09708179B2Publication Date: 2017-07-18
- Inventor: Yuan-Chih Hsieh , Li-Cheng Chu , Hung-Hua Lin , Chih-Jen Chan , Lan-Lin Chao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/12
- IPC: H01L23/12 ; B81B7/00 ; B81C1/00 ; H01L23/26 ; H01L21/322

Abstract:
In some embodiments, the present disclosure relates to a MEMs (microelectromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.
Public/Granted literature
- US20160101976A1 METHOD OF IMPROVING GETTER EFFICIENCY BY INCREASING SUPERFICIAL AREA Public/Granted day:2016-04-14
Information query
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