Invention Grant
- Patent Title: Apparatus for measuring impurities on wafer and method of measuring impurities on wafer
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Application No.: US15258959Application Date: 2016-09-07
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Publication No.: US09721817B2Publication Date: 2017-08-01
- Inventor: Seung Wook Lee
- Applicant: LG Siltron Inc.
- Applicant Address: KR Gyeongbuk
- Assignee: LG Siltron Inc.
- Current Assignee: LG Siltron Inc.
- Current Assignee Address: KR Gyeongbuk
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR10-2011-0024738 20110321
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/66 ; G01N1/32 ; G01N35/00 ; G01N1/40 ; G01N1/34 ; H01J49/00 ; G01N1/38
Abstract:
Provided are an apparatus for measuring impurities on a wafer and a method of measuring impurities on a wafer. The apparatus includes: a wafer aligning device for aligning a wafer; a loading robot for moving and loading the aligned wafer; a rotation stage for rotating the loaded wafer; a scan robot for holding a natural oxide layer etching solution for the wafer and a metallic impurity recovery solution; and a container for receiving a predetermined etching solution and a recovery solution, wherein the scan robot removes an oxide layer on an edge region of the wafer.
Public/Granted literature
- US20170069515A1 APPARATUS FOR MEASURING IMPURITIES ON WAFER AND METHOD OF MEASURING IMPURITIES ON WAFER Public/Granted day:2017-03-09
Information query
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