Invention Grant
- Patent Title: Pattern trimming compositions and methods
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Application No.: US15062701Application Date: 2016-03-07
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Publication No.: US09760011B1Publication Date: 2017-09-12
- Inventor: Kevin Rowell , Cong Liu , Cheng Bai Xu , Irvinder Kaur , Jong Keun Park
- Applicant: Rohm and Haas Electronic Materials LLC
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent Jonathan D. Baskin
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/40 ; G03F1/40 ; H01L21/027 ; G03F7/30 ; G03F7/32 ; G03F7/11
Abstract:
Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.
Public/Granted literature
- US20170255102A1 PATTERN TRIMMING COMPOSITIONS AND METHODS Public/Granted day:2017-09-07
Information query
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