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    Photoresist pattern trimming compositions and pattern formation methods
    1.
    发明授权
    Photoresist pattern trimming compositions and pattern formation methods 有权

    公开(公告)号：US11506981B2

    公开(公告)日：2022-11-22

    申请号：US16872878

    申请日：2020-05-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Xisen Hou ,  Irvinder Kaur ,  Cong Liu ,  Mingqi Li ,  Kevin Rowell ,  Cheng-Bai Xu

    IPC: G03F7/11 ,  G03F7/38 ,  C08F212/08 ,  H01L21/027 ,  C08F212/14 ,  C08F220/18

    Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS OF TRIMMING PHOTORESIST PATTERNS
    2.
    发明申请
    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS OF TRIMMING PHOTORESIST PATTERNS 有权

    公开(公告)号：US20220128906A1

    公开(公告)日：2022-04-28

    申请号：US17081258

    申请日：2020-10-27

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder Kaur ,  Cong Liu ,  Kevin Rowell

    IPC: G03F7/039 ,  H01L21/027 ,  H01L21/311

    Abstract: Photoresist pattern trimming compositions comprise: a polymer comprising as polymerized units a monomer comprising an acid-decomposable group, the decomposition of which group forms a carboxylic acid group on the polymer; a non-polymeric acid or a non-polymeric thermal acid generator; and an organic-based solvent system comprising one or more organic solvents. Methods of trimming photoresist patterns involve applying such pattern trimming compositions to a photoresist pattern that is formed from a photoresist composition comprising a photoacid generator and a polymer comprising acid-decomposable groups. The photoresist pattern trimming compositions and pattern formation methods find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.

    Pattern formation methods and photoresist pattern overcoat compositions
    3.
    发明授权
    Pattern formation methods and photoresist pattern overcoat compositions 有权

    公开(公告)号：US11003074B2

    公开(公告)日：2021-05-11

    申请号：US15960825

    申请日：2018-04-24

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Xisen Hou ,  Cong Liu ,  Irvinder Kaur

    IPC: G03F7/11 ,  G03F7/40 ,  G03F7/16 ,  G03F7/00 ,  C08F220/68 ,  H01L21/027 ,  C09D133/16 ,  C09D133/02 ,  G03F7/039 ,  G03F7/004 ,  C08F212/14

    Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS
    4.
    发明申请
    PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开

    公开(公告)号：US20200379351A1

    公开(公告)日：2020-12-03

    申请号：US16872878

    申请日：2020-05-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Xisen Hou ,  Irvinder Kaur ,  Cong Liu ,  Mingqi Li ,  Kevin Rowell ,  Cheng-Bai Xu

    IPC: G03F7/11 ,  G03F7/38 ,  C08F212/08 ,  C08F220/18 ,  C08F212/14 ,  H01L21/027

    Abstract: Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, —O—, or —C(O)O—; R1 independently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; R2 represents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

    Pattern-formation methods
    5.
    发明授权
    Pattern-formation methods 有权

    公开(公告)号：US10684549B2

    公开(公告)日：2020-06-16

    申请号：US15846658

    申请日：2017-12-19

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Kevin Rowell ,  Cong Liu ,  Cheng Bai Xu ,  Irvinder Kaur ,  Xisen Hou ,  Mingqi Li

    IPC: G03F7/40

    Abstract: Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

    Photoresist topcoat compositions and methods of processing photoresist compositions
    6.
    发明授权
    Photoresist topcoat compositions and methods of processing photoresist compositions 有权

    公开(公告)号：US10578969B2

    公开(公告)日：2020-03-03

    申请号：US16245631

    申请日：2019-01-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

    IPC: G03F7/11 ,  G03F7/09 ,  G03F7/038 ,  B05C11/08 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  G03F7/40 ,  G03F7/38 ,  G03F7/20

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

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