Invention Grant
- Patent Title: Semiconductor component comprising an interlayer
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Application No.: US14784135Application Date: 2014-04-17
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Publication No.: US09761758B2Publication Date: 2017-09-12
- Inventor: Tobias Meyer , Matthias Peter , Jürgen Off , Alexander Walter , Tobias Gotschke , Christian Leirer
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102013104192 20130425
- International Application: PCT/EP2014/057947 WO 20140417
- International Announcement: WO2014/173825 WO 20141030
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/32 ; H01L33/12 ; H01L33/02 ; H01L33/22
Abstract:
An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0
Public/Granted literature
- US20160079476A1 SEMICONDUCTOR COMPONENT COMPRISING AN INTERLAYER Public/Granted day:2016-03-17
Information query
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