-
公开(公告)号：US20170338217A1
公开(公告)日：2017-11-23
申请号：US15671772
申请日：2017-08-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC: H01L27/02 , H01L31/0236 , H01L33/32 , H01L27/15 , H01L33/02 , H01L31/0352 , H01L31/0304 , H01L33/06 , H01L33/08 , H01L33/24
CPC classification number: H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
-
公开(公告)号：US20160020201A1
公开(公告)日：2016-01-21
申请号：US14686364
申请日：2015-04-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC: H01L27/02 , H01L33/24 , H01L31/0304 , H01L33/08 , H01L31/0352 , H01L31/0236 , H01L33/06 , H01L33/32
CPC classification number: H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
Abstract translation: 光电子半导体芯片具有包括多个微二极管的第一半导体层序列和包含有源区的第二半导体层序列。 第一半导体层序列和第二半导体层序列基于氮化物化合物半导体材料，第一半导体层序列在生长方向上位于第一半导体层序列之前，并且微二极管形成用于有源区的ESD保护。
-
3.发明授权Reflective contact layer system for an optoelectronic component and method for producing same 有权一种用于光电子元件的反射接触层系统及其制造方法公开(公告)号：US09196789B2
公开(公告)日：2015-11-24
申请号：US14418913
申请日：2013-07-24
Applicant: OSRAM Opto Semiconductors GmbH , Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Inventor： Matthias Peter , Simeon Katz , Jürgen Off , Korbinian Perzlmaier , Kai Gehrke , Rolf Aidam , Jürgen Däubler , Thorsten Passow
IPC: H01L33/32 , H01L33/10 , H01L33/40 , H01L33/00 , H01L33/42 , H01L31/02 , H01L33/30 , H01L33/36 , H01L33/46 , H01L31/0216 , H01L31/0224 , H01L31/0236 , H01L31/0304 , H01L31/18 , H01L31/054 , H01L31/056
CPC classification number: H01L33/10 , H01L31/02002 , H01L31/02005 , H01L31/02161 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022441 , H01L31/022475 , H01L31/0236 , H01L31/0304 , H01L31/054 , H01L31/056 , H01L31/184 , H01L33/0008 , H01L33/0062 , H01L33/007 , H01L33/0075 , H01L33/12 , H01L33/30 , H01L33/32 , H01L33/325 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058 , Y02E10/52 , H01L2924/00
Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.
Abstract translation: 公开了一种用于形成用于光电子部件的反射接触层系统的反射接触层系统和方法。 在一个实施例中，该部件包括布置在第一p掺杂氮化物半导体层和透明导电层之间的第一p掺杂氮化物化合物半导体层，透明导电氧化物层，次要层和第二p掺杂氮化物化合物半导体层 氧化物层，其中第二p掺杂氮化物化合物半导体层在面向透明导电氧化物层的界面处具有N面域，并且其中界面处的N面域具有至少95％的面积比。
-
公开(公告)号：US09728674B2
公开(公告)日：2017-08-08
申请号：US15285447
申请日：2016-10-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Tobias Meyer , Matthias Peter , Juergen Off , Joachim Hertkorn , Andreas Loeffler , Alexander Walter , Dario Schiavon
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32 , H01L33/58
Abstract: The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.
-
公开(公告)号：US20170025570A1
公开(公告)日：2017-01-26
申请号：US15287140
申请日：2016-10-06
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
Abstract translation: 半导体芯片包括具有半导体层序列的半导体本体。 用于产生辐射的有源区域设置在n导电多层结构和p导电半导体层之间。 掺杂分布形成在包括至少一个掺杂峰的n导电多层结构中。
-
Patent Agency Ranking
公开(公告)号：US12021350B2
公开(公告)日：2024-06-25
申请号：US17289124
申请日：2019-11-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jan Wagner , Werner Bergbauer , Christoph Eichler , Alfred Lell , Georg Brüderl , Matthias Peter
CPC classification number: H01S5/4031 , H01S5/34333
Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0≤x≤1, 0≤y
-
公开(公告)号：US20170324001A1
公开(公告)日：2017-11-09
申请号：US15656169
申请日：2017-07-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
CPC classification number: H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
-
公开(公告)号：US09761758B2
公开(公告)日：2017-09-12
申请号：US14784135
申请日：2014-04-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Tobias Meyer , Matthias Peter , Jürgen Off , Alexander Walter , Tobias Gotschke , Christian Leirer
CPC classification number: H01L33/325 , H01L33/0025 , H01L33/025 , H01L33/12 , H01L33/22
Abstract: An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0
-
公开(公告)号：US20160079476A1
公开(公告)日：2016-03-17
申请号：US14784135
申请日：2014-04-17
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Tobias Meyer , Matthias Peter , Jürgen Off , Alexander Walter , Tobias Gotschke , Christian Leirer
CPC classification number: H01L33/325 , H01L33/0025 , H01L33/025 , H01L33/12 , H01L33/22
Abstract: An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0
Abstract translation: 光电子半导体部件包括层序列，其包括p掺杂层，n掺杂层和产生布置在n掺杂层和p掺杂层之间的电磁辐射的有源区，其中n掺杂层包括在 在n掺杂层中布置了最小的GaN，中间层，其中中间层包括Al x Ga 1-x N，其中0
-
10.发明申请公开(公告)号：US20150270434A1
公开(公告)日：2015-09-24
申请号：US14430538
申请日：2013-09-18
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Joachim Hertkorn , Jan-Philipp Ahl , Lorenzo Zini , Matthias Peter , Tobias Meyer , Alexander Frey
CPC classification number: H01L33/0075 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L33/14 , H01L33/22 , H01L33/32
Abstract: A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.
Abstract translation: 提供了一种用于制造光电子器件的方法，包括以下步骤：提供衬底，在所述衬底的表面上施加成核层，在所述成核层上施加和图案化掩模层，在第一生长步骤中生长氮化物半导体， 其中布置形成横向晶格的网，其中所述网在生长方向上的位置具有梯形横截面面积，并且在第二生长步骤中用氮化物半导体横向过度生长所述网以封闭所述网之间的空间。
-
-
-
-
-
-
-
-
-
Search Results
23
records
(took 0.034 seconds)
