Invention Grant
- Patent Title: Semiconductor light source
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Application No.: US13867943Application Date: 2013-04-22
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Publication No.: US09761775B2Publication Date: 2017-09-12
- Inventor: Densen Cao
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L33/64
- IPC: H01L33/64 ; F21K9/232 ; H01L25/075 ; H01L33/48 ; H01L33/62 ; F21V3/02 ; F21Y115/10 ; F21Y107/30
Abstract:
A light source may comprise a thermally conductive frame comprising a base and a faceted portion extending from the base. The faceted portion may comprise a plurality of facets spaced circumferentially thereabout. Additionally, a hollow passageway may extend through the base and axially through the faceted portion. A plurality of LED chips may be arranged on the plurality of facets to provide an emission of light in an arc of 360 degrees.
Public/Granted literature
- US20130234174A1 Semiconductor Light Source Public/Granted day:2013-09-12
Information query
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