Invention Grant
- Patent Title: Method of producing a semiconductor device with through-substrate via covered by a solder ball
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Application No.: US15283189Application Date: 2016-09-30
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Publication No.: US09773729B2Publication Date: 2017-09-26
- Inventor: Cathal Cassidy , Martin Schrems , Franz Schrank
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: EP11190389 20111123
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/522 ; H01L21/768 ; H01L23/48 ; H01L23/00 ; H01L23/528 ; H01L23/532 ; H01L23/552 ; H01L25/065
Abstract:
A semiconductor substrate is provided with a through-substrate via comprising a metallization and an opening. A solder ball is placed on the opening. A reflow of the solder ball is performed in such a way that the solder ball closes the through-substrate via and leaves a void in the through-substrate via.
Public/Granted literature
- US20170018518A1 METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA COVERED BY A SOLDER BALL Public/Granted day:2017-01-19
Information query
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