Invention Grant
- Patent Title: Electron emission device and transistor provided with the same
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Application No.: US15503539Application Date: 2015-10-02
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Publication No.: US09779906B2Publication Date: 2017-10-03
- Inventor: Tsuyoshi Ishikawa , Takashi Katsuno , Narumasa Soejima
- Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Applicant Address: JP Nagakute-shi
- Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Current Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Current Assignee Address: JP Nagakute-shi
- Agency: Oliff PLC
- Priority: JP2014-234782 20141119
- International Application: PCT/JP2015/078115 WO 20151002
- International Announcement: WO2016/080091 WO 20160526
- Main IPC: H01J29/48
- IPC: H01J29/48 ; H01J1/30 ; H01J1/34 ; H01J1/35 ; H01J1/304 ; H01S3/16
Abstract:
An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.
Public/Granted literature
- US20170243712A1 ELECTRON EMISSION DEVICE AND TRANSISTOR PROVIDED WITH THE SAME Public/Granted day:2017-08-24
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