Invention Grant
- Patent Title: Forming semiconductor structure with device layers and TRL
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Application No.: US15386014Application Date: 2016-12-21
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Publication No.: US09783414B2Publication Date: 2017-10-10
- Inventor: Michael A. Stuber
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00 ; B81B3/00
Abstract:
A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.
Public/Granted literature
- US20170101309A1 Forming Semiconductor Structure with Device Layers and TRL Public/Granted day:2017-04-13
Information query
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