Invention Grant
- Patent Title: Ion beam generator, ion implantation apparatus including an ion beam generator and method of using an ion beam generator
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Application No.: US15452842Application Date: 2017-03-08
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Publication No.: US09786470B2Publication Date: 2017-10-10
- Inventor: Shao-Hua Wang , Ming-Te Chen , Sheng-Wei Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/317 ; H01J37/30 ; C23C14/48

Abstract:
An ion beam generator includes a plurality of arc chambers, wherein each arc chamber of the plurality of arc chamber is integral with every arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of extraction slits, wherein each extraction slit of the plurality of extraction slits is configured to extract ions from a corresponding arc chamber of the plurality of arc chambers. The ion beam generator further includes a plurality of arc slits, wherein each arc slit of the plurality of arc slits is configured to provide an ion path between a corresponding extraction slit of the plurality of extraction slits and the corresponding arc chamber of the plurality of arc chambers.
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