Invention Grant
- Patent Title: Vertical single electron transistor formed by condensation
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Application No.: US15401471Application Date: 2017-01-09
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Publication No.: US09793349B1Publication Date: 2017-10-17
- Inventor: Kangguo Cheng , Xin Miao , Wenyu Xu , Chen Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/338 ; H01L21/337 ; H01L29/74 ; H01L31/0328 ; H01L29/06 ; H01L29/78 ; H01L29/51 ; H01L21/02 ; H01L21/306 ; H01L29/66
Abstract:
A method for forming a vertical single electron transistor includes forming a heterostructured nanowire having a SiGe region centrally disposed between an upper portion and a lower portion in the nanowire. An oxide is deposited to cover the SiGe region, and a condensation process is performed to convert the SiGe to oxide and condense Ge to form an island between the upper portion and the lower portion of the nanowire. A bottom contact is formed about the lower portion, a first dielectric layer is formed on the bottom contact and a gate structure is formed about the island on the first dielectric layer. A second dielectric layer is formed on the gate structure, and a top contact is formed on the second dielectric layer.
Public/Granted literature
- US20170294509A1 VERTICAL SINGLE ELECTRON TRANSISTOR FORMED BY CONDENSATION Public/Granted day:2017-10-12
Information query
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