Invention Grant
- Patent Title: Semiconductor light-emitting device
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Application No.: US15332730Application Date: 2016-10-24
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Publication No.: US09793436B2Publication Date: 2017-10-17
- Inventor: Hsin-Chih Chiu , Shih-I Chen , You-Hsien Chang , Hao-Min Ku , Ching-Yuan Tsai , Kuan-Chih Kuo , Chih-Hung Hsiao , Rong-Ren Lee
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Priority: TW104101418A 20150116
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/22 ; H01L33/38 ; H01L33/02 ; H01L33/24 ; H01L33/10 ; H01L33/30 ; H01L33/42 ; H01L33/14 ; H01L33/20 ; H01L33/40
Abstract:
A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.
Public/Granted literature
- US20170040492A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2017-02-09
Information query
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