Invention Grant
- Patent Title: Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device
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Application No.: US14901575Application Date: 2014-09-25
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Publication No.: US09798050B2Publication Date: 2017-10-24
- Inventor: Kazuhiro Hamamoto , Toshihiko Orihara
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-202493 20130927
- International Application: PCT/JP2014/075379 WO 20140925
- International Announcement: WO2015/046303 WO 20150402
- Main IPC: G03B27/32
- IPC: G03B27/32 ; G02B5/08 ; G03F1/24 ; G02B5/26 ; G02B5/28 ; G03F1/52 ; G03F1/84 ; G03F7/20 ; G02B1/14 ; G02B5/00

Abstract:
A substrate with a multilayer reflective film capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus.The substrate with a multilayer reflective film has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value I of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 μm×3 μm with an atomic force microscope, is not more than 180×10−3 nm3, and the maximum value of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
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