Invention Grant
- Patent Title: Metal oxide semiconductor thin film, thin film transistor, and their fabricating methods, and display apparatus
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Application No.: US15038127Application Date: 2015-12-10
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Publication No.: US09806097B2Publication Date: 2017-10-31
- Inventor: Guangcai Yuan , Liangchen Yan , Xiaoguang Xu , Lei Wang , Junbiao Peng , Linfeng Lan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Applicant Address: CN Beijing CN Guangzhou
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Current Assignee Address: CN Beijing CN Guangzhou
- Agency: Anova Law Group, PLLC
- Priority: CN201510379122 20150701
- International Application: PCT/CN2015/096946 WO 20151210
- International Announcement: WO2017/000503 WO 20170105
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L27/12 ; H01L29/04 ; H01L29/786
Abstract:
A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.
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