Invention Grant
- Patent Title: Ion implantation apparatus with ion beam directing unit
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Application No.: US15189209Application Date: 2016-06-22
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Publication No.: US09809877B2Publication Date: 2017-11-07
- Inventor: Alexander Breymesser , Stephan Voss , Hans-Joachim Schulze , Werner Schustereder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: C23C14/48
- IPC: C23C14/48 ; H01J37/147 ; H01J37/20 ; H01J37/317 ; H01L29/06 ; H01L29/744 ; H01L29/36 ; H01L29/861 ; H01L21/265 ; H01L21/687 ; H01L29/45
Abstract:
An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.
Public/Granted literature
- US20160305012A1 Ion Implantation Apparatus with Ion Beam Directing Unit Public/Granted day:2016-10-20
Information query
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