Invention Grant
- Patent Title: Dual material repeller
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Application No.: US15007853Application Date: 2016-01-27
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Publication No.: US09824846B2Publication Date: 2017-11-21
- Inventor: William Davis Lee , Alexander S. Perel , David P. Sporleder
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: H01J27/02
- IPC: H01J27/02 ; H01J27/20

Abstract:
The IHC ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The repeller is made of two discrete parts, each comprising a different material. The repeller includes a repeller head, which may be a disc shaped component, and a stem to support the head. The repeller head is made from a conductive material having a higher thermal conductivity than the stem. In this way, the temperature of the repeller head is maintained at a higher temperature than would otherwise be possible. The higher temperature limits the build-up of material on the repeller head, which improves the performance of the IHC ion source. In certain embodiments, the repeller head and the stem are connected using a press fit. Differences in the coefficient of thermal expansion of the repeller head and the stem may cause the press fit to become tighter at higher temperatures.
Public/Granted literature
- US20170213684A1 Dual Material Repeller Public/Granted day:2017-07-27
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