Invention Grant
- Patent Title: GaN transistors with polysilicon layers used for creating additional components
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Application No.: US14959710Application Date: 2015-12-04
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Publication No.: US09837438B2Publication Date: 2017-12-05
- Inventor: Jianjun Cao , Robert Beach , Alexander Lidow , Alana Nakata , Guangyuan Zhao , Yanping Ma , Robert Strittmatter , Michael A. De Rooij , Chunhua Zhou , Seshadri Kolluri , Fang-Chang Liu , Ming-Kun Chiang , Jiali Cao , Agus Jauhar
- Applicant: Efficient Power Conversion Corporation
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Blank Rome LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/66 ; H01L27/085 ; H01L29/778 ; H01L21/822 ; H01L29/40 ; H01L21/8258 ; H01L29/04 ; H01L29/16 ; H01L29/417 ; H01L21/763 ; H01L29/10 ; H01L29/20
Abstract:
A GaN transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.
Public/Granted literature
- US20160086980A1 GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS Public/Granted day:2016-03-24
Information query
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