Invention Grant
- Patent Title: Imaging pixels with a fully depleted charge transfer path
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Application No.: US15176317Application Date: 2016-06-08
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Publication No.: US09854184B2Publication Date: 2017-12-26
- Inventor: Sergey Velichko , Vladimir Korobov
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent Joseph F. Guihan
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N3/14 ; H04N5/353 ; H01L27/146 ; H04N5/357 ; H04N5/378

Abstract:
An imaging pixel may have a fully depleted charge transfer path between a pinned photodiode and a floating diffusion region. A pinned transfer diode may be coupled between the pinned photodiode and the floating diffusion region. The imaging pixel may be formed in upper and lower substrates with an interconnect layer coupling the upper substrate to the lower substrate. The imaging pixel may include one or more storage diodes coupled between the transfer diode and the floating diffusion region. The imaging pixel may be used to capture high dynamic range images with flicker mitigation, images synchronized with light sources, or for high frame rate operation.
Public/Granted literature
- US20170257578A1 IMAGING PIXELS WITH A FULLY DEPLETED CHARGE TRANSFER PATH Public/Granted day:2017-09-07
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